1 file number 4141.3 caution: these devices are sensitive to electrostatic discharge; follow proper esd handling procedures. 1-888-intersil or 321-724-7143 | copyright intersil corporation 2000 hgtD7N60C3S, hgtp7n60c3 14a, 600v, ufs series n-channel igbts the hgtD7N60C3S and hgtp7n60c3 are mos gated high voltage switching devices combining the best features of mosfets and bipolar transistors. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49115. symbol features 14a, 600v at t c = 25 o c 600v switching soa capability typical fall time. . . . . . . . . . . . . . . . 140ns at t j = 150 o c short circuit rating low conduction loss packaging jedec to-220ab jedec to-252aa ordering information part number package brand hgtD7N60C3S to-252aa g7n60c hgtp7n60c3 to-220ab g7n60c3 note: when ordering, use the entire part number. add the suf? 9a to obtain the to-252aa variant in tape and reel, i.e. hgtD7N60C3S9a. c e g gate emitter collector collector (flange) gate emitter collector (flange) intersil corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet january 2000
2 absolute maximum ratings t c = 25 o c, unless otherwise speci?d hgtD7N60C3S hgtp7n60c3 units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 14 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 7a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i cm 56 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c, figure 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . .ssoa 40a at 480v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 60 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 w/ o c reverse voltage avalanche energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e arv 100 mj operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -40 to 150 o c maximum lead temperature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t l 260 o c short circuit withstand time (note 2) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 1 s short circuit withstand time (note 2) at v ge = 10v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 8 s caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. v ce(pk) = 360v, t j = 125 o c, r g = 50 ?. electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v emitter to collector breakdown voltage bv ecs i c = 3ma, v ge = 0v 16 30 - v collector to emitter leakage current i ces v ce = bv ces t c = 25 o c - - 250 a v ce = bv ces t c = 150 o c - - 2.0 ma collector to emitter saturation voltage v ce(sat) i c = i c110 , v ge = 15v t c = 25 o c - 1.6 2.0 v t c = 150 o c - 1.9 2.4 v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge t c = 25 o c 3.0 5.0 6.0 v gate to emitter leakage current i ges v ge = 25v - - 250 na switching soa ssoa t j = 150 o c r g = 50 ? v ge = 15v l = 1mh v ce(pk) = 480v 40 - - a v ce(pk) = 600v 6 - - a gate to emitter plateau voltage v gep i c = i c110 , v ce = 0.5 bv ces -8-v on-state gate charge q g(on) i c = i c110 , v ce = 0.5 bv ces v ge = 15v - 23 30 nc v ge = 20v - 30 38 nc hgtD7N60C3S, hgtp7n60c3
3 current turn-on delay time t d(on)i t j = 150 o c i ce = i c110 v ce(pk) = 0.8 bv ces v ge = 15v r g = 50 ? l = 1.0mh - 8.5 - ns current rise time t ri - 11.5 - ns current turn-off delay time t d(off)i - 350 400 ns current fall time t fi - 140 275 ns turn-on energy e on - 165 - j turn-off energy (note 3) e off - 600 - j thermal resistance r jc - - 2.1 o c/w note: 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). the hgtD7N60C3S and hgtp7n60c3 were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true total turn-off energy loss. turn- on losses include diode losses. electrical speci?ations t c = 25 o c, unless otherwise speci?d (continued) parameter symbol test conditions min typ max units typical performance curves figure 1. transfer characteristics figure 2. saturation characteristics figure 3. collector to emitter on-state voltage figure 4. collector to emitter on-state voltage i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 4681012 0 5 10 20 25 30 35 14 15 40 t c = 150 o c pulse duration = 250 s duty cycle <0.5%, v ce = 10v t c = 25 o c t c = -40 o c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 0246810 5 10 15 12.0v 8.5v 9.0v 8.0v 7.5v 7.0v v ge = 15.0v 20 25 30 35 40 10.0v pulse duration = 250 s, duty cycle <0.5%, t c = 25 o c i ce , collector to emitter current (a) 0 15 012345 20 v ce , collector to emitter voltage (v) t c = 150 o c t c = 25 o c t c = -40 o c 5 10 25 35 40 30 duty cycle <0.5%, v ge = 10v pulse duration = 250 s i ce , collector to emitter current (a) 0 15 012345 v ce , collector to emitter voltage (v) t c = 25 o c t c = -40 o c t c = 150 o c duty cycle <0.5%, v ge = 15v pulse duration = 250 s 5 10 20 25 30 35 40 hgtD7N60C3S, hgtp7n60c3
4 figure 5. maximum dc collector current vs case temperature figure 6. short circuit withstand time figure 7. turn-on delay time vs collector to emitter current figure 8. turn-off delay time vs collector to emitter current figure 9. turn-on rise time vs collector to emitter current figure 10. turn-off fall time vs collector to emitter current typical performance curves (continued) 25 50 75 100 125 150 0 3 6 9 12 15 i ce , dc collector current (a) t c , case temperature ( o c) v ge = 15v i sc , peak short circuit current(a) 60 80 120 t sc , short circuit withstand time ( s) 10 11 12 v ge , gate to emitter voltage (v) 14 15 13 140 100 40 i sc t sc 10 12 v ce = 360v, r g = 50 ? , t j = 125 o c 4 6 8 2 t d(on)i , turn-on delay time (ns) 10 20 30 2 5 11 14 i ce , collector to emitter current (a) 50 17 20 40 v ge = 10v v ge = 15v t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v 8 5 i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 400 350 250 200 2 8 11 14 17 20 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v v ge = 10v or 15v 300 5 500 450 i ce , collector to emitter current (a) t ri , turn-on rise time (ns) 5 10 100 v ge = 15v v ge = 10v 200 2 8 11 14 17 20 5 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v i ce , collector to emitter current (a) t fi , fall time (ns) 100 200 300 150 2 8 11 14 17 20 5 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v 250 v ge = 10v or 15v hgtD7N60C3S, hgtp7n60c3
5 figure 11. turn-on energy loss vs collector to emitter current figure 12. turn-off energy loss vs collector to emitter current figure 13. operating frequency vs collector to emitter current figure 14. minimum switching safe operating area figure 15. capacitance vs collector to emitter voltage figure 16. gate charge waveforms typical performance curves (continued) i ce , collector to emitter current (a) 40 e on , turn-on energy loss ( j) 100 500 1000 2000 2 8 11 14 17 20 5 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v v ge = 10v v ge = 15v i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 500 1000 3000 100 v ge = 10v or 15v 2 8 11 14 17 20 5 t j = 150 o c, r g = 50 ? , l = 1mh, v ce(pk) = 480v i ce , collector to emitter current (a) f max , operating frequency (khz) 2102030 10 100 200 1 t j = 150 o c, t c = 75 o c r g = 50 ? , l = 1mh v ge = 15v v ge = 10v f max2 = (p d - p c )/(e on + e off ) p d = allowable dissipation p c = conduction dissipation f max1 = 0.05/(t d(off)i + t d(on)i ) (duty factor = 50%) r jc = 2.1 o c/w v ce(pk) , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 100 200 300 400 500 600 0 10 20 30 40 t j = 150 o c, v ge = 15v, r g = 50 ? , l = 1mh 50 c oes c res v ce , collector to emitter voltage (v) 0 5 10 15 20 25 0 1000 1200 c, capacitance (pf) c ies frequency = 1mhz 800 600 400 200 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) q g , gate charge (nc) i g(ref) = 1.044ma, r l = 50 ? , t c = 25 o c 0 300 200 400 500 600 15 12.5 10 7.5 5 0 v ce = 400v v ce = 200v 51015202530 0 100 2.5 v ce = 600v hgtD7N60C3S, hgtp7n60c3
6 figure 17. igbt normalized transient thermal impedance, junction to case typical performance curves (continued) t 1 , rectangular pulse duration (s) 10 -5 10 -3 10 0 10 1 10 -4 10 -1 10 -2 10 0 z jc , normalized thermal response 10 -1 10 -2 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.5 0.2 0.1 0.05 0.02 t 1 t 2 p d 0.01 test circuit and waveform figure 18. inductive switching test circuit figure 19. switching test waveforms r g = 50 ? l = 1mh v dd = 480v + - rhrd660 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on hgtD7N60C3S, hgtp7n60c3
7 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?ccosorbd ? ld26?or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or ?ating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information figure 13 is presented as a guide for estimating device performance for a speci? application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 4, 7, 8, 11 and 12. the operating frequency plot (figure 13) of a typical device shows f max1 or f max2 whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f max1 is de?ed by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. other de?itions are possible. t d(off)i and t d(on)i are de?ed in figure 19. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 13) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on and e off are defined in the switching waveforms shown in figure 19. e on is the integral of the instantaneous power loss (i ce xv ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce xv ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e. the collector current equals zero (i ce = 0). hgtD7N60C3S, hgtp7n60c3 eccosorbd is a trademark of emerson and cumming, inc.
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